4
RF Device Data
Freescale Semiconductor
MRF1550NT1 MRF1550FNT1
TYPICAL CHARACTERISTICS
50
20
Pout, OUTPUT POWER (WATTS)
50
80
3010
60
40
30
175 MHz
155 MHz
Figure 4. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
11
10
14
Figure 5. Drain Efficiency versus Output Power
20
GAIN (dB)
Figure 6. Output Power versus Biasing Current
IDQ, BIASING CURRENT (mA)
Figure 7. Drain Efficiency versus
Biasing Current
70
IDQ, BIASING CURRENT (mA)
Figure 8. Output Power versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
12
11
4010 11
60
60
1200 1200400
70
600 1000800
80
55
65
12
16
40200
50
13
P
out
, OUTPUT POWER (WATTS)
200 1000400 600
800
P
out
, OUTPUT POWER (WATTS)
15
3010
30
10
80
40
60
50
50
70
135 MHz
175 MHz
155 MHz
155 MHz
175 MHz
135 MHz
155 MHz
175 MHz
135 MHz
VDD
= 12.5 Vdc
Pin
= 35 dBm
IDQ
= 500 mA
Pin
= 35 dBm
VDD
= 12.5 Vdc
Pin
= 35 dBm
VDD
= 12.5 Vdc
40 60 7050 80
15
40 60 7050 80
70
VDD
= 12.5 Vdc
60
70
14
12 13
80
90
15
13 14
175 MHz
155 MHz
135 MHz
135 MHz
IDQ
= 500 mA
Pin
= 35 dBm
155 MHz
175 MHz
135 MHz
, DRAIN EFFICIENCY (%)
, DRAIN EFFICIENCY (%)
, DRAIN EFFICIENCY (%)
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